Tuesday, July 15, 2014

FYI - 1 TB data in postage stamp sized memory device.- RRAM


(From the article)

Rice University’s breakthrough silicon oxide technology will allow manufacturers to fabricate “resistive random-access memory” (RRAM) devices at room temperature with conventional production methods, the researchers say. In a new paper in Nano Letters, a Rice team led by chemist James Tour compared its RRAM technology to more than a dozen competing versions.



The link below has more information:-

http://www.kurzweilai.net/rices-silicon-oxide-memories-catch-manufacturers-eye

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